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"GPX" has two types: HS-C series for Cu and HS-T series for barrier metals. The polishing performance is controllable for various processes and devices.
Advanced semiconductor devices with high performance are required to have multi-level layers, fine patterns to obtain high speed transmission. CMP process is indespensable to have well-planarized interlayer dielectric or metals in LSI and accomplish the above requirments.
| Item | Unit | HS-H635 | HS-T605 | HS-T815 | |
|---|---|---|---|---|---|
| Use | -- | for Cu | for TaN | ||
| Features | -- | Abrasive free like High removal @low down force | High selective | Non selective | |
| Removal Rate | Cu | A/min. | 8,000 | 250 | 480 |
| TaN | 40 | 650 | 750 | ||
| SiO2 | -- | <50 | 650 | ||
| SiOC | -- | <50 | 200 | ||